HRF-SW1000-FL-TR

HRF-SW1000-FL-TR SPDT Absorptive RF Switch

HRF-SW1000-FL-TR Product Overview

The HRF-SW1000-FL-TR is a high-performance Single Pole Double Throw (SPDT) absorptive RF switch from Honeywell, designed for wireless infrastructure applications requiring a combination of high isolation and ultra-low DC power consumption. Manufactured using Honeywell's patented Silicon On Insulator (SOI) CMOS technology, this switch provides the high-frequency performance of GaAs with the economy and integration capabilities of conventional CMOS.

The HRF-SW1000-FL-TR operates over a DC to 4 GHz frequency range and is impedance-matched for 50 Ohm systems. It features an absorptive topology with integrated CMOS control logic and ESD protection on digital I/O. The device is housed in a compact 12-VQFN (3x3 mm) package with an exposed pad for enhanced thermal performance. The "-TR" suffix indicates tape and reel packaging, and the device is RoHS compliant and halogen-free.

HRF-SW1000-FL-TR Key Specifications

Frequency range: DC to 4 GHz
Circuit type: SPDT (Single Pole Double Throw)
Topology: Absorptive
Impedance: 50 Ohm
Insertion loss: 1.7 dB (typical)
Isolation: 41 dB
Supply voltage: 3.3V to 5.5V
P1dB: 27 dBm
IIP3: 37 dBm
Test frequency: 3 GHz
RF type: Cellular, PCS, GSM, WLL
Operating temperature: -40°C to +85°C
Package: 12-VQFN (3x3 mm)
Moisture Sensitivity Level (MSL): 3 (168 hours)
Packaging: Tape & Reel (TR)
RoHS: Compliant
Part status: Obsolete / Not For New Designs

HRF-SW1000-FL-TR Key Advantages

The HRF-SW1000-FL-TR provides high isolation of 41 dB, ensuring excellent signal separation between RF paths and minimizing crosstalk in demanding wireless applications. The low insertion loss of 1.7 dB preserves signal integrity and maximizes system efficiency.

The absorptive topology maintains a 50 Ohm match in both the on and off states, reducing reflections and improving overall system performance. The wide 3.3V to 5.5V supply voltage range provides flexibility for various system power rails.

Honeywell's SOI CMOS technology integrates CMOS control logic and ESD protection directly on-chip, reducing external component count and simplifying board-level design. The compact 3x3 mm VQFN package enables space-constrained designs while the exposed pad enhances thermal dissipation. The device is halogen-free and RoHS compliant, meeting current environmental regulations.

HRF-SW1000-FL-TR Typical Applications

Cellular base stations and infrastructure
PCS (Personal Communications Service) systems
GSM wireless communication equipment
WLL (Wireless Local Loop) systems
Wireless local area networks (WLAN)
Telecommunications and data transmission systems
Wireless basestation and handset applications
General-purpose RF switching in 50 Ohm systems

HRF-SW1000-FL-TR Why Choose the HRF-SW1000-FL-TR?

The HRF-SW1000-FL-TR combines DC to 4 GHz frequency coverage, 41 dB isolation, 1.7 dB insertion loss, and absorptive topology in a compact 3x3 mm VQFN package. Manufactured by Honeywell using patented SOI CMOS technology, it delivers the high-frequency performance of GaAs with the integration and cost benefits of conventional CMOS.

The integrated CMOS control logic and ESD protection reduce external component count and simplify design. The wide 3.3V to 5.5V supply voltage range and 50 Ohm matched impedance provide flexibility for a variety of wireless infrastructure applications.

Please note that this product is classified as Obsolete / Not For New Designs according to distributor indications. For new projects, please consult Honeywell for alternative recommendations. The device is RoHS compliant, halogen-free, and available in tape and reel packaging.