IMBF170R1K0M1

IMBF170R1K0M1 – Infineon CoolSiC™ 1700V SiC Trench MOSFET

Revolutionary high-voltage auxiliary power solution for next-generation power conversion systems

Are you struggling with high power loss from conventional 1500V silicon MOSFETs when the input voltage reaches up to 1000V in your high-voltage power electronics designs? Do you have to repeatedly rework PCB layouts to meet creepage distance requirements? Does the thermal issue of auxiliary power supplies force you to add extra heatsinks? The IMBF170R1K0M1 is born to completely eliminate these pain points.

IMBF170R1K0M1 Product Overview

The IMBF170R1K0M1 is a star product in Infineon’s CoolSiC™ portfolio, using advanced SiC trench MOSFET technology and housed in an enhanced creepage distance TO-263-7 surface-mount (SMD) package. As part of the 1700V CoolSiC™ family, this device is specifically designed for auxiliary power supply circuits in three-phase power conversion systems, delivering reliable power for control logic, displays, and cooling fans.

Key benefits at a glance:

IMBF170R1K0M1 Key Technical Specifications

The IMBF170R1K0M1 is an N-channel enhancement-mode SiC MOSFET with the following key electrical parameters:

IMBF170R1K0M1 Core Technology Features

Optimized for flyback topology, fully compatible with mainstream PWM controllers

The IMBF170R1K0M1 features a 12V/0V gate-source voltage design, making it directly compatible with most flyback PWM controllers on the market – no separate gate driver IC required. This greatly simplifies the peripheral circuit design. In high-voltage auxiliary power supplies, fewer components mean lower BOM cost and higher system reliability.

Ultra-low switching loss, significantly improved system efficiency

Thanks to the superior physical properties of silicon carbide and Infineon’s advanced trench technology, the IMBF170R1K0M1 achieves extremely low switching and conduction losses. Compared to advanced 1500V silicon MOSFETs, power loss is reduced by more than 50%, with a 2.5% efficiency gain; compared to other 1700V SiC MOSFETs, efficiency is improved by an additional 0.6%. Lower losses mean less heat generation, enabling a compact SMD package design that operates with natural convection cooling – no heatsink required.

Enhanced TO-263-7 SMD package with >7mm creepage distance

The TO-263-7 package used in the IMBF170R1K0M1 is another highlight. It features a creepage distance and clearance of more than 7mm, fully meeting the safety requirements of 1700V high-voltage applications while minimizing isolation efforts on the PCB. At the same time, the SMD package allows easy integration onto the PCB and supports automated pick-and-place assembly, reducing manufacturing costs.

Fully controllable dv/dt for EMI optimization

The device provides fully controllable dv/dt characteristics, allowing design engineers to adjust switching speed based on specific application requirements. This helps achieve an optimal balance between efficiency and electromagnetic interference, facilitating EMI certification.

Industry-leading gate oxide reliability

Infineon’s CoolSiC™ trench technology offers the lowest device capacitance and gate charge among transistors in this voltage class, together with excellent gate oxide reliability. This ensures stable performance over long-term operation and significantly reduces the risk of system failure due to gate ageing.

IMBF170R1K0M1 Typical Applications

The IMBF170R1K0M1 targets auxiliary power supply circuits in threephase power conversion systems, covering a wide range of applications with DC-link voltages from 600V to 1000V:

 EV charging infrastructure – core component of auxiliary power supporting control logic and communication modules inside charging piles

Photovoltaic inverters – auxiliary power for string inverters and central inverters

Industrial motor drives & variable frequency drives – central device for auxiliary power in general motor drives

Energy storage systems – auxiliary power for battery management systems

Uninterruptible power supplies (UPS) – internal auxiliary power for industrial UPS

Industrial switch-mode power supplies and chargers – high input voltage DC-DC conversion applications

Infineon’s official reference design uses this device to build a 62.5W auxiliary power supply (200VDC-1000VDC wide input voltage range, quasi-resonant mode, peak efficiency up to 90.56% at full load). This design can be directly used in solar inverters, energy storage, EV chargers, UPS, and motor drives, providing a reliable starting point for engineers.

Why Infineon and the IMBF170R1K0M1?

Infineon is a global leader in power semiconductors, combining leading-edge technology with a broad ecosystem to deliver reliable, high-performance solutions for high-voltage power conversion. The CoolSiC™ family merges the superior physical properties of silicon carbide with Infineon’s unique trench semiconductor technology, setting industry benchmarks in high voltage, high efficiency, and high reliability.

By choosing the IMBF170R1K0M1, you get:

Higher efficiency – >50% reduction in power loss helps systems easily meet energy efficiency standards
Higher power density – compact SMD package with natural convection cooling for more flexible designs
Lower system cost – simplified isolation design and reduced BOM component count
Faster timetomarket – rich reference designs and complete technical support system
Longterm supply security – globally leading semiconductor manufacturing capability and mature supply chain