IMBG120R060M1H — Infineon CoolSiC™ 1200V Silicon Carbide MOSFET

60 mΩ On-resistance | Trench gate technology | .XT interconnection technology | Highest efficiency and outstanding reliability

IMBG120R060M1H Product Overview

The IMBG120R060M1H is a 1200V, 60mΩ CoolSiC™ trench N-channel Silicon Carbide (SiC) MOSFET from Infineon, offered in the advanced D²PAK-7L (TO-263-7) surface-mount package. Based on Infineon’s proprietary advanced trench process, this device achieves an excellent balance between performance and reliability.

By combining the low-loss characteristics of CoolSiC™ technology with .XT interconnection technology, the device significantly improves thermal performance. It enables highest efficiency and even passive cooling in demanding applications such as motor drives, charging modules and industrial power supplies.

Key ratings:

Key Advantages — Why Choose IMBG120R060M1H?

Ultra-low Switching Losses, Dramatically Improved Efficiency

Compared to conventional silicon (Si) IGBTs, the CoolSiC™ MOSFET 1200V family reduces switching losses by up to 80% and conduction losses by up to 50%. Inverter efficiency can easily exceed 99%, significantly lowering operating costs. Even in highfrequency switching applications, losses remain extremely low.

ShortCircuit Ruggedness: 3 µs, High Reliability Design

The device offers a 3 µs short-circuit withstand time, providing a sufficient protection response window under abnormal conditions and improving system robustness and safety.

Excellent Parasitic Turn-on Immunity, Simplified Gate Drive Design

With a typical gate threshold voltage VGS(th) = 4.5 V, the device features outstanding immunity against parasitic turnon, allowing 0 V turnoff gate voltage. This greatly reduces the risk of false turnon and simplifies gate drive circuit design.

Fully Controllable dV/dt, Easier EMI Design

The dV/dt is fully controllable, giving engineers flexibility to trade off switching speed and EMI performance. This reduces system tuning effort and shortens product development cycles.

XT Interconnection Technology, Superior Thermal Performance

Integrated with Infineon’s .XT interconnection technology, the device significantly lowers the thermal resistance from chip to package, achieving superior thermal performance for stable and reliable operation even at high temperatures.

No External Heatsink Needed – SMD Package for Direct Integration

The surface-mount (SMD) package allows natural convection cooling without an additional heatsink under appropriate power conditions. It can be directly integrated onto the PCB, simplifying system construction and reducing overall cost.

Sense Pin for Optimized Switching Performance

A dedicated Sense pin enables accurate current sensing and optimized switching performance, especially valuable in power conversion applications that require precise switching control.

High Creepage and Clearance Distances, Ideal for HighReliability Industrial Applications

Package creepage and clearance distances are > 6.1 mm, meeting strict safety spacing requirements for high-reliability industrial equipment, particularly in harsh environments with high pollution levels.

IMBG120R060M1H Key Features at a Glance

IMBG120R060M1H Typical Applications

Renewable energy:

Solar string inverters

Solar optimizers

Industrial power:

Industrial UPS

Charging modules / EV charging infrastructure

Motor drives

High-power-density industrial power supplies

Other high-frequency, high-efficiency applications:

PFC (power factor correction)

DC-DC converters

DC-AC inverters

Hard-switching and resonant-switching topologies