Infineon CoolSiC™ IMZ120R045M1 – 1200V Silicon Carbide MOSFET

IMZ120R045M1 Break Through Efficiency Boundaries, Redefine Power Conversion

As demands for power density and system efficiency become increasingly stringent, traditional silicon-based IGBTs struggle to meet the needs of high-frequency, high-temperature, and high-efficiency applications. The Infineon CoolSiC™ IMZ120R045M1 SiC MOSFET represents a significant leap in 1200V power semiconductors, delivering unprecedented performance for photovoltaic inverters, electric vehicles, industrial power supplies, UPS systems, and beyond.

IMZ120R045M1 Key Specifications

Six Core Advantages of IMZ120R045M1

Extremely Low Switching Losses – Significant Efficiency Gain

Built on Infineon’s advanced SiC trench gate technology, the IMZ120R045M1 delivers exceptionally low switching losses. Measurements show that inverters using this device reduce transistor losses by more than 50% compared to alternative solutions. This translates to higher output efficiency for the same input power, or much lower cooling requirements for the same output power.

No Threshold Turn-on Characteristic – Smooth, Precise Control

Unlike conventional MOSFETs, the IMZ120R045M1 exhibits a threshold-free turn-on characteristic with no abrupt knee point. This allows smoother, more precise control, making it ideal for applications that demand stringent current regulation.

0V Gate Turn-off Voltage – Simplified Driver Design

The unique 0V turn-off gate voltage eliminates the need for a negative supply voltage for reliable turn-off. This greatly simplifies gate drive circuitry, reduces system cost, and lowers failure risk.

Wide Gate-Source Voltage Range – Excellent Compatibility

Supports a wide gate drive voltage range (recommended turnon voltage +15V, max –10V to +20V), offering high compatibility with mainstream gate drivers and flexible design options.

Robust Body Diode with Strong Commutation – Suited for Synchronous Rectification

Features a highly rugged body diode with excellent commutation performance, enabling wide application in synchronous rectification topologies for further system efficiency improvement.

Industrial Reliability – Stable Operation in Harsh Environments

Rigorously tested and certified according to JEDEC47/20/22 industrial standards. The operating junction temperature range of –55°C to +175°C ensures stable and reliable operation under extreme hot or cold conditions.

Main Application Fields

Thanks to its outstanding performance, the IMZ120R045M1 is widely used in the following demanding applications:

IMZ120R045M1 Why the TO-247-4 Package?

The IMZ120R045M1 uses the innovative four-pin TO-247-4 package, which offers unique advantages over traditional three-pin packages:

Kelvin source pin: An independent driver source pin eliminates the effect of common-source inductance on the gate drive loop.

Higher switching speed: Significantly reduces parasitic inductance in the gate drive loop, enabling faster switching and lower switching losses.

Simplified drive design: Clean drive waveforms without the need for extra compensation circuits, reducing EMI risk and design complexity.

The package is compatible with mainstream heat-sinking solutions, making it easy to drop-in replace existing designs and accelerate timetomarket.